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Snapdragon 820 set to give Galaxy S7 a big power boost

The next generation Samsung Galaxy S7 smartphone could see a marked performance boost, judging by early benchmarking tests revealed this week.

The presence of the new-and-improved Qualcomm Snapdragon 820 processor is likely to give the S7 a considerable jump in power, according to the tests published by a Weibo user (via GforGames).

The benchmarking graph shows the performance of a Snapdragon 810 (in green), compared with two prototypes of the S7 running the 820-A and 820-B. The tests show consistent, across the board improvements.

Compared with the Snapdragon 810, the 820-B offers 1.38x performance improvements for the single threaded integer, while offering a 1.77x single threaded floating point tests.

Of course, it’s always important to take such reports with a pinch of salt, as its impossible to know whether the tests were actually conducted with Samsung devices.

See also: Samsung Galaxy S6 review

Qualcomm is currently prepping the 820 chip for a consumer release with the next fleet of flagship smartphone devices.

The company will be hoping the chip fairs better than the Snapdragon 810 chip, which was dogged by reports of overheating issues and given a wide-berth for Samsung for the Galaxy S6.

Samsung is said to have been working with Qualcomm in order to refine the new chip, so it’ll be interesting to see the fruits of the two company’s efforts when the S7 rolls around early next year.

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